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Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure

2021

The nature of the radiation-induced point defects in amorphous silica is investigated through online photoluminescence (PL) under high intensity ultrashort laser pulses. Using 1030 nm femtosecond laser pulses with a repetition rate of 1 kHz, it is possible to study the induced color centers through their PL signatures monitored during the laser exposure. Their generation is driven by the nonlinear absorption of the light related to the high pulse peak powers provided by femtosecond laser, allowing to probe the optical properties of the laser exposed region. The experiment is conducted as a function of the laser pulse power in samples with different OH contents. The results highlight the dif…

Materials sciencePhotoluminescenceamorphous silicastructural modificationsSilicon dioxide02 engineering and technology01 natural scienceschemistry.chemical_compoundonline photoluminescence0103 physical sciencesMaterials Chemistrypoint defectsElectrical and Electronic Engineering010306 general physicsfemtosecond lasersComputingMilieux_MISCELLANEOUS[PHYS]Physics [physics]business.industrySettore FIS/01 - Fisica SperimentaleSurfaces and Interfaces021001 nanoscience & nanotechnologyCondensed Matter PhysicsCrystallographic defectSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialschemistryFemtosecondOptoelectronicsLaser exposureAmorphous silica0210 nano-technologybusiness
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